Ultrafast carrier dynamics in modified semiconductor-doped glass
- 2 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1), 1-3
- https://doi.org/10.1063/1.100824
Abstract
The recombination lifetime in CdSx Se1−x semiconductor‐doped glass was measured by time‐resolved photoluminescence. It was found that long‐term exposure of the glass to high‐intensity laser pulses produced a permanent reduction of the free‐carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.Keywords
This publication has 10 references indexed in Scilit:
- Intensity-dependent photoluminescence spectra of semiconductor-doped glassesApplied Physics Letters, 1988
- Time-resolved direct observation of Auger recombination in semiconductor-doped glassesApplied Physics Letters, 1987
- Nonlinear optical glasses for ultrafast optical switchesIEEE Journal of Quantum Electronics, 1987
- Electron-hole recombination lifetimes in a quasi-zero-dimensional electron system in CdSxSe1−xApplied Physics Letters, 1987
- Observation of optical bistability in CdSXSe_1−X-doped glasses with 25-psec switching timeOptics Letters, 1987
- Picosecond carrier recombination dynamics of semiconductor-doped glassesApplied Physics Letters, 1987
- Quantum confinement effects of semiconducting microcrystallites in glassJournal of Applied Physics, 1987
- New results on optical phase conjugation in semiconductor-doped glassesJournal of the Optical Society of America B, 1987
- Luminescence and photophysics of cadmium sulfide semiconductor clusters: the nature of the emitting electronic stateThe Journal of Physical Chemistry, 1986
- Ultrafast carrier and grating lifetimes in semiconductor-doped glassesApplied Physics Letters, 1985