Low-threshold 1.55-μm InGaAsP/InP buried heterostructure distributed feedback lasers
- 27 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (4), 273-275
- https://doi.org/10.1063/1.98471
Abstract
An extremely low‐threshold current of 6 mA in cw mode at 22 °C was achieved in 1.55‐μm InGaAsP/InP buried heterostructure distributed feedback lasers with a first‐order grating and a normal cavity length of 300 μm. These lasers exhibited an average differential efficiency of 30% total at 4 mW without any coating on the facets, and a T0 (25–70 °C) value of 55 K. A spectral linewidth as low as 8 MHz at cw mode was obtained. The lasers showed high‐speed pulse modulation response to 2.4 Gb/s (NRZ).Keywords
This publication has 3 references indexed in Scilit:
- Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order gratingElectronics Letters, 1986
- Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order gratingElectronics Letters, 1985
- Low-threshold and high temperature single-longitudinal-mode operation of 1.55 μm-band DFB-DC-PBH LDsElectronics Letters, 1984