Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
- 1 May 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (5), 427-432
- https://doi.org/10.1007/s11664-998-0172-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self-organization, and optical propertiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAsPhysical Review Letters, 1996
- Structural characterization of (In,Ga)As quantum dots in a GaAs matrixPhysical Review B, 1995
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Mesoscopic Structure in Lattice-Mismatched Heteroepitaxial Interface LayersPublished by Springer Nature ,1992
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structuresJournal of Crystal Growth, 1989
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985