Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5A), L533
- https://doi.org/10.1143/jjap.26.l533
Abstract
The electrical properties of nitrogen-doped n-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures ranging from 10 to 1000 K. The activation energy of the N-donors was obtained from the temperature dependence of carrier density. The donor-density dependence of the activation energies of donors in N-doped 3C-SiC is quite different from that of unintentionally-doped ones, and the donors in unintentionally-doped 3C-SiC were proved not to be nitrogen atoms.Keywords
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