Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films

Abstract

The effects of the Si/(Si+C) ratio in the reaction gas stream on the growth and properties of monocrystalline β-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of β-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si+C) ratio in the source gases have been initially obtained from thermodynamic calculations using the ‘‘solgasmix-pv’’ computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si+C)=0.5.