Incorporation of Oxygen into Silicon during Pulsed-Laser Irradiation
- 1 July 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (7), L375
- https://doi.org/10.1143/jjap.19.l375
Abstract
Evidence for the oxygen incorporation into silicon during surface melting by the pulsed-laser irradiation is presented. SIMS measurement of 18O in Si samples which were laser-irradiated in 18O2 atmosphere shows that 18O is introduced in Si with the maximum concentration 7×1020 cm-3 and the penetration depth 1.4 µm. The incorporation of 18O is blocked when the Si surface is covered with SiO2.Keywords
This publication has 2 references indexed in Scilit:
- Heat-treatment behavior of microdefects and residual impurities in CZ silicon crystalsJournal of Applied Physics, 1979
- Two-stage laser annealing of lattice disorder in phosphorus implanted siliconPhysica Status Solidi (a), 1978