Two-stage laser annealing of lattice disorder in phosphorus implanted silicon
- 16 September 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 49 (1), 347-352
- https://doi.org/10.1002/pssa.2210490144
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Amorphous thickness dependence in the transition to single crystal induced by laser pulsePhysics Letters A, 1978
- Structure of crystallized layers by laser annealing of ⟨100⟩ and ⟨111⟩ self-implanted silicon samplesApplied Physics A, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- Lattice location of boron implanted silicon after laser annealingLettere al Nuovo Cimento (1971-1985), 1978
- Disorder produced by high-dose implantation in SiApplied Physics Letters, 1976
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976