Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission
- 1 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1), 542-544
- https://doi.org/10.1063/1.347705
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Silicon temperature measurement by infrared transmission for rapid thermal processing applicationsApplied Physics Letters, 1990
- Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processingIEEE Electron Device Letters, 1989
- Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Optical absorption coefficient of silicon at 1.152 μ at elevated temperaturesApplied Physics Letters, 1982
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958