Optical absorption coefficient of silicon at 1.152 μ at elevated temperatures
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7), 594-596
- https://doi.org/10.1063/1.93621
Abstract
The optical absorption coefficient of silicon has been measured at the HeNe near-infrared line (λ = 1.152 μm) from room temperature to 1140 K. The results are compared with the previous less extensive data in the literature, and with the formulation given by Macfarlane et al. [Phys. Rev. 111, 1245 (1958)]. It is found that the absorption is described very well by phonon-assisted indirect transitions across an energy gap having the temperature dependence described by Thurmond.Keywords
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