Optically pumped laser oscillation at 3.82 μm from InAs1−xSbx grown by molecular beam epitaxy on GaSb
- 1 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (11), 1139-1141
- https://doi.org/10.1063/1.96355
Abstract
Molecular beam epitaxy has been used to grow InAs1−xSbx active layers on GaSb substrates. Lattice matches of better than 10−3 were obtained with x≂0.09. Index waveguiding of the relatively low refractive index InAs1−xSbx is obtained by using an adjacent GaSb guiding layer and a lower refractive index Al0.5Ga0.5Sb cladding layer. Optically pumped laser emission at 3.82 μm has been observed from 77 to 135 K with a T0=15.9 K.Keywords
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