Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSb
- 1 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3), 283-285
- https://doi.org/10.1063/1.95659
Abstract
We have succeeded in growing epitaxial layers and multilayer heterostructures of In1−xGaxAs1−ySby quaternary and InAs0.92Sb0.08 ternary alloys lattice matched to GaSb by molecular beam epitaxy. High quality epilayers with lattice mismatch Δa/a∼8×10−4, excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quaternary and ternary alloys were also investigated using in situ reflection high‐energy electron diffraction.Keywords
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