Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSb

Abstract

We have succeeded in growing epitaxial layers and multilayer heterostructures of In_1−xGa_xAs_1−ySb_y quaternary and InAs_0.92Sb_0.08 ternary alloys lattice matched to GaSb by molecular beam epitaxy. High quality epilayers with lattice mismatch Δa/a∼8×10⁻⁴, excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quaternary and ternary alloys were also investigated using in situ reflection high‐energy electron diffraction.