Optimization of ammonia-sensitive metal-oxide-semiconductor structures with platinum gates
- 6 May 1987
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 11 (4), 349-365
- https://doi.org/10.1016/0250-6874(87)80075-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- The fabrication of amorphous SiO2 substrates suitable for transmission electron microscopy studies of ultrathin polycrystalline filmsThin Solid Films, 1986
- Biosensors based on ammonia sensitive metal-oxide-semiconductor structuresSensors and Actuators, 1985
- Determination of urea with an ammonia gas-sensitive semiconductor device in combination with ureaseAnalytica Chimica Acta, 1984
- Determination of ammonia in air and aqueous samples with a gas-sensitive semiconductor capacitorAnalytica Chimica Acta, 1984
- Modified palladium metal-oxide-semiconductor structures with increased ammonia gas sensitivityApplied Physics Letters, 1983
- Hydrogen sensitive mos-structuresSensors and Actuators, 1981
- Adsorption and decomposition of nitric oxide and ammonia on a stepped platinum single crystal surfaceSurface Science, 1978
- Detection of H2S with Pd-gate MOS field-effect transistorsJournal of Applied Physics, 1976
- Electrical Conduction between Metallic MicroparticlesJournal of Applied Physics, 1966
- Electrical Conduction Mechanism in Ultrathin, Evaporated Metal FilmsJournal of Applied Physics, 1962