A ‘four parameters’ model that fits the degradation curve ΔVG(VG) of MOS transistors under irradiation
- 30 September 1972
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (9), 1029-1031
- https://doi.org/10.1016/0038-1101(72)90147-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- On the behaviour of currents going through MOS structures under ionizing radiationsSolid-State Electronics, 1971
- Degradation mechanism of m.o.s. structures and transistors under ionising radiationElectronics Letters, 1970
- Effects of ionizing radiation on MOS devicesSolid-State Electronics, 1969