Raman scattering analysis of relaxed GexSi1−x alloy layers
- 26 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (17), 2069-2071
- https://doi.org/10.1063/1.109481
Abstract
We have used Raman scattering to evaluate thick epitaxial GexSi1−x layers with 0.20≤x≤0.43 grown on Si (100) substrates. We show that a detailed consideration of the composition dependencies of the relative intensities of the various phonon modes can enhance the sensitivity of Raman scattering to variations in composition and strain. We find that samples are uniform on a scale of ≂1 μm laterally and <1000 Å in the growth direction.Keywords
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