Temperature dependence of photoluminescence from Be-implanted GaAs
- 1 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (9), 509-512
- https://doi.org/10.1063/1.88836
Abstract
Photoluminescence data from Be‐implanted GaAs are presented for the temperature range 3–120 °K. A luminescence band at 1.493 eV is associated with recombination from the conduction band to neutral Be acceptors, based on the temperature dependence. The binding energy of Be acceptors in GaAs is estimated to be 28.4 meV from the temperature dependence of the peak energy of this band.Keywords
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