Tunnel injection into the confined-particle states of an In1−xGaxP1−zAsz well in InP
- 15 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (10), 703-705
- https://doi.org/10.1063/1.89518
Abstract
Tunnel injection is demonstrated into the confined‐particle states of an In1−xGaxP1−zAsz potential well, located on the p‐type side of an InP p‐n junction, leading to structure in the I‐V, dI/dV, and d2I/dV2 characteristics and to step increases in the intensity of the recombination radiation at bias voltages V corresponding to the states of the well [eV∼Eg(InGaPAs) ∼hν<Eg(InP)].Keywords
This publication has 7 references indexed in Scilit:
- Defect- and phonon-assisted tunneling in LPE In1−xGaxP1−zAsz DH laser diodes (λ∼1 μm)Journal of Applied Physics, 1977
- LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (<500 Å) active regionApplied Physics Letters, 1977
- Multiple liquid phase epitaxy of In1−xGaxP1−zAsz double-heterojunction lasers: The problem of lattice matchingApplied Physics Letters, 1977
- Tunneling involving defects in LPE In1−xGaxP1−zAsz(x∼0.12, z∼0.26) double-heterojunction lasersApplied Physics Letters, 1977
- Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctionsJournal of Applied Physics, 1977
- Direct Observation of Superlattice Formation in a Semiconductor HeterostructurePhysical Review Letters, 1975
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974