Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate

Abstract

We have fabricated a new silicon field emitter that incorporates a metal-oxide-silicon field-effect transistor (MOSFET) structure with a dual gate. One gate is an extraction gate that extracts electrons from the emitter. The other is a control gate that controls the channel conductance in order to regulate the emission current. The fabrication process is simple and compatible with conventional LSI process. The present device exhibits excellent controllability and stability of the emission current. This is because electron emission from the emitter is precisely regulated by the channel current of the built-in MOSFET.