Monolithic Fabrication and Electrical Characteristics of Polycrystalline Silicon Field Emitters and Thin Film Transistor
- 1 January 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (1B), L84
- https://doi.org/10.1143/jjap.35.l84
Abstract
We have developed a novel monolithic fabrication method for polycrystalline silicon (poly-Si) field emitters and a poly-Si thin film transistor (TFT). Poly-Si field emitters were fabricated using a mold transfer process, which allows a TFT to be fabricated under the field emitters and saves space for emitter fabrication. We have also demonstrated successful control of the field emission using the monolithically fabricated TFT.Keywords
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