Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs
- 15 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (7), 3386-3399
- https://doi.org/10.1103/physrevb.45.3386
Abstract
Positron-lifetime measurements show that acceptors are produced in semi-insulating GaAs by 1.5-MeV electron irradiation at 20 K. Two types of acceptors can be separated. The first ones are negative vacancy-type defects which anneal out over a very broad range of temperature between 77 and 500 K. The second ones are negative ion-type defects which are stable still at 450 K. The data show that these two types of defects are independent and do not form close pairs. We attribute both to gallium-related defects. We identify the ion-type acceptors as isolated gallium antisites. The vacancy-type acceptors are identified as gallium vacancies which are isolated or involved in negatively charged complexes. The introduction rate of the gallium antisite is estimated to be 1.8±0.3 in the fluence range – for 1.5-MeV electron irradiation at 20 K.
Keywords
This publication has 42 references indexed in Scilit:
- Qualitative and Quantitative Differentiation of Paramagnetic Anion‐Antisite‐Related Spectra in GaAsPhysica Status Solidi (b), 1990
- Defect production in electron-irradiated, n-type GaAsJournal of Applied Physics, 1987
- The donor nature of the main electron traps in electron-irradiated n-type GaAsSolid State Communications, 1987
- Detection of Ga vacancies in electron irradiated GaAs by positronsApplied Physics Letters, 1986
- Identification of the arsenic vacancy defect in electron-irradiated GaAsPhysical Review B, 1986
- Formation of AsGa antisite defects in electron-irradiated GaAsJournal of Applied Physics, 1985
- An electron-trapping defect level associated with the 235K annealing stage in electron-irradiation n-GaAsJournal of Physics C: Solid State Physics, 1985
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980