Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on Si
- 19 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (16), 1271-1273
- https://doi.org/10.1063/1.98702
Abstract
Data are presented on p‐n (diode) AlxGa1−xAs‐GaAs quantum well lasers grown on Si indicating that continuous 300 K operation is possible for four or more hours. Lower threshold diodes (1.4 kA/cm2) of given dislocation density are not necessarily as stable as higher threshold diodes (1.8 kA/cm2) of lower dislocation density, ∼10 min vs ≳4 h. Stability data on diodes agree with the behavior of photopumped samples of the same crystals with the Si substrates removed.Keywords
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