Unified theory of high-frequency noise in Schottky barriers
- 1 June 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (6), 2805-2808
- https://doi.org/10.1063/1.1662653
Abstract
A unified noise‐temperature equation is presented which describes the high‐frequency noise (>1/f noise) characteristic of Schottky barrierdiodes from above room temperature to cryogenic temperatures. The unified noise equation takes into consideration the dominant transport mechanism of the barrier and is applicable to any metal‐semiconductor system. Noise‐temperature measurements on fabricated Schottky barrierdiodes at 18, 77, and 300 °K confirm the validity of the noise theory presented.Keywords
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