Shot Noise in Platinum-Gallium Arsenide Schottky Barrier Diodes

Abstract

The high‐frequency shot noise of Pt–GaAs Schottky barrierdiodes has been measured at 60 MHz for both guard‐ring and non‐guard‐ring structures. The measured equivalent noise temperature agrees well with the shot‐noise theory of semiconductor junctions at relatively high forward currents where the metal‐semiconductor interface effects can be neglected. At low levels of forward bias the measured noise is greater than that predicted by conventional theory. A measured excess‐leakage conductance showing full thermal noise is added to the model and accounts for part of the difference between theory and experiment. The requirements for low‐noise diodes are outlined.