Influence of Cu as an impurity in Al/V thin-film reactions
- 1 September 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (5), 1838-1840
- https://doi.org/10.1063/1.336036
Abstract
Thin-film reactions of Al/V with and without 4 at. % Cu in the Al have been studied by Rutherford backscattering, x-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy after vacuum annealing in the temperature range 300–500 °C. In the Al/V system, the intermetallic phase VAl3 grows as (time)1/2 with an activation energy of 2.1±0.2 eV. The presence of Cu in the Al retards the VAl3 growth and alters the phase sequence.Keywords
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