Surface cyclotron resonance in Si under uniaxial stress
- 30 November 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (5), 519-522
- https://doi.org/10.1016/0038-1098(76)90160-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Surface quantum oscillations in (100) inversion layers under uniaxial stressSolid State Communications, 1976
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976
- Observation of Higher Sub-band in-Type (100) Si Inversion LayersPhysical Review Letters, 1975
- Temperature-Dependent Cyclotron Mass of Inversion-Layer Electrons in SiPhysical Review Letters, 1975
- Cyclotron Resonance of Localized Electrons on a Si SurfacePhysical Review Letters, 1975
- Piezoresistance in n-type silicon inversion layers at low temperaturesPhysica Status Solidi (a), 1973
- Piezoresistance in Quantized Conduction Bands in Silicon Inversion LayersJournal of Applied Physics, 1971
- RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACEApplied Physics Letters, 1967
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965