Temperature-Dependent Cyclotron Mass of Inversion-Layer Electrons in Si

Abstract

We have investigated the effect of temperature on the cyclotron resonance of electrons in an inversion layer on (100) Si between 4 and 80 K. With increasing temperature the resonance line is found to broaden and to shift considerably to higher resonance fields. The latter effect is strongest at low electron densities and, if interpreted as due to a temperature-dependent effective mass ${m_c}^{*}$, corresponds to changes in ${m_c}^{*}$ in excess of 50%.