Glow Discharge a-Si1-xCx: H Films Studied by ESR and IR Measurements
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2A), L119-121
- https://doi.org/10.1143/jjap.21.l119
Abstract
The results of ESR, IR and optical measurements on hydrogenated amorphous Si1-x C x films prepared by glow discharge (GD a-Si1-x C x : H) are presented. The spin density N s increases drastically from 1016 cm-3 to 1020 cm-3 and the g-value gradually decreases from 2.0055 to 2.003, as the C content x is increased from 0 to 0.6. The weak dependence of g-value on x when x is less than 0.3 indicates that the increase in N s with x is mainly due not to C dangling bonds but to Si dangling bonds in contrast with the results of previous studies on a-Si1-x C x films prepared by CVD or rf sputtering.Keywords
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