Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A), L785
- https://doi.org/10.1143/jjap.23.l785
Abstract
An InP doping superlattice structure has been fabricated by hydride vapor phase epitaxy with a multibarrel reactor, using Zn and S as dopants. Layer thickness and doping level were varied from 150 to 2000 Å and 0.5×1018 to 8×1018 cm-3, respectively. Although Zn dopant diffusion into the n-layers occurred in the fabricated samples, photoluminescent peak wavelength shifts due to the indirect carrier transition in real space were observed at 77 K.Keywords
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