Epitaxial Growth of YBaCuO Films on Sapphire at 500°C by Metalorganie Chemical Vapor Deposition

Abstract

Single crystalline films of YBaCuO have been epitaxially prepared for the first time on sapphire substrates at temperatures as low as 500°C by the metalorganic chemical vapor deposition method. The starting materials were Y(HFA)₃, Ba(HFA)₂, and Cu(AcAc)₂. Deposition was carried out with an oxygen pressure of 10 Torr. Electron probe measurements and Auger electron spectroscopy suggest that the constituent of the film is YBa₂Cu₃O _x . Carbon has not been detected in the film. Spots and streak patterns obtained in the electron diffraction measurements suggest high crystalline quality and smoothness of the surface.