Examining the screening limit of field effect devices via the metal-insulator transition
- 28 March 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (14), 142501
- https://doi.org/10.1063/1.1897076
Abstract
The electronic screening length, the distance over which an electric field is attenuated in a material, imposes a lower physical bound on the lateral size scaling of semiconductor field effect devices. Alternatives will be needed to achieve devices whose characteristic dimensions approach a nanometer. In this work, we demonstrate the atomic-scale nature of screening at high electron densities, using the polarization field of a ferroelectric oxide, Pb ( Zr , Ti ) O 3 , to electrostatically modulate the metallicity of ultrathin manganite La 1 − x Sr x Mn O 3 (LSMO) films near the metal-insulator transition. Within the screening length, the transport characteristics of LSMO vary sharply at the scale of a single atomic layer.Keywords
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