Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

Abstract

An all-perovskite ferroelectric field-effect transistor with a ferroelectric $\mathrm{Pb}({\mathrm{Zr}}_{\text{0.2}}{\mathrm{Ti}}_{\text{0.8}}){\mathrm{O}}_3$ (PZT) gate and a colossal magnetoresistive ${\mathrm{La}}_{\text{0.8}}{\mathrm{Ca}}_{\text{0.2}}{\mathrm{MnO}}_3$ (LCMO) channel has been successfully fabricated by pulsed-laser deposition on Si. A clear and square channel resistivity hysteresis loop, commensurate with the ferroelectric hysteresis loop of PZT, is observed. A maximum modulation of 20% after an electric field poling of ${\text{1.5×10}}^5\hspace{0.17em}\mathrm{V/cm},$ and 50% under a magnetic field of 1 T, are achieved near the metal-insulator transition temperature of the LCMO channel. A data retention time of at least one day is measured. The effects of electric and magnetic fields on the LCMO channel resistance are discussed within the framework of phase separation scenario.