A model for the origin of the oscillatory structure in the reverse bias J(V) characteristics of n+GaAs/(AlGa)As/n-GaAs/n+GaAs tunnelling devices
- 30 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (27), L885-L888
- https://doi.org/10.1088/0022-3719/18/27/008
Abstract
The oscillatory structure in the low-temperature reverse bias characteristics of n+GaAs/(AlGa)As/n-GaAs/n+GaAs tunnelling devices is explained in terms of the modulation of the resistivity of the undepleted region of the n- layer above the substrate by means of energy relaxation of hot electrons arriving from the high-field depletion layer beyond the barrier.Keywords
This publication has 7 references indexed in Scilit:
- Tunneling and magneto-tunnelling effects in n+GaAs/(AlGa)As/n-GaAs/n+GaAs devicesJournal of Physics C: Solid State Physics, 1985
- Oscillatory structures in GaAs/(AlGa)As tunnel junctionsPhysical Review Letters, 1985
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- Origin of the current oscillations in GaAs-AlGaAs tunnel junctionsPhysical Review B, 1985
- Sequential Single-Phonon Emission in GaAs-Tunnel JunctionsPhysical Review Letters, 1984
- Frequency dependence of hopping conductivity in n-GaAsJournal of Physics C: Solid State Physics, 1984
- Impurity conduction and magnetoresistance in lightly dopedn-type GaAsZeitschrift für Physik B Condensed Matter, 1976