Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxy
- 15 November 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (10), 786-788
- https://doi.org/10.1063/1.92583
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Al-Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxyApplied Physics Letters, 1981
- A visible (AlGa)As heterostructure laser grown by molecular beam epitaxyApplied Physics Letters, 1981
- cw narrow beam (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1981
- Device characteristics of (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- High-barrier cluster-free AlxGa1−xAs-AlAs-GaAs quantum-well heterostructure laserApplied Physics Letters, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Current injection GaAs-AlxGa1−xAs multi-quantum-well heterostructure lasers prepared by molecular beam epitaxyApplied Physics Letters, 1979
- Optical analysis of multiple-quantum-well lasersApplied Optics, 1979
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978