Current injection GaAs-AlxGa1−xAs multi-quantum-well heterostructure lasers prepared by molecular beam epitaxy
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9), 673-675
- https://doi.org/10.1063/1.91241
Abstract
Low‐current‐threshold room‐temperature injection GaAs‐AlxGa1−xAs multi‐quantum‐well (MQW) lasers have been prepared by molecular beam epitaxy. Under pulsed current injection, lasing emission attributed to the n=1 electron‐to‐light‐hole (1 e‐lh) confined‐particle transition was observed at threshold. Above threshold, lasing emission involving the n=1 electron‐to‐heavy‐hole transition (1 e−hh) became dominant. Single longitudinal mode operation has also been observed for these broad‐area MQW lasers. For heat‐sink temperatures between 8 and 100 °C, the lasing current threshold Ith for the 1 e−hh transition has an exponential variation with temperature of the form Ith∝ exp(T/T0), where T0=230 °K.Keywords
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