Size fluctuations and high-energy laser operation of AlxGa1−xAs-AlAs-GaAs quantum-well heterostructures

Abstract
In AlxGa1−x As‐GaAs quantum‐well heterostructures (QWH’s) or superlattices (SL’s) with coupling barrier sizes LB Lz = δLB can be observed, via luminescence or laser spectral shifts, on all‐binary, active‐region (AlAs‐GaAs) QWH’s or SL’s. The small spectral broadening and downward shift indicate a size change δLz = δLB as small as a monolayer for high‐energy, all‐binary QWH and SL structures grown by metal‐organic chemical vapor deposition. Narrow‐spectrum cw 300‐K laser operation has been realized at λ∼7500 Å, and should be possible to λ≲6785 Å.