Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-xGaxP1-zAsz(λ ~ 6700 Å)
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (2), 161-166
- https://doi.org/10.1109/jqe.1981.1071064
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructuresSolid State Communications, 1980
- Compositional inhomogeneity of liquid phase epitaxial InGaPAs layers observed directly in photoluminescenceApplied Physics Letters, 1980
- Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniquesJournal of Electronic Materials, 1980
- Transverse-mode stabilized Ga_1−xAlxAs visible diode lasersApplied Optics, 1979
- The influence of LPE growth techniques on the alloy composition of InGaAsPApplied Physics Letters, 1979
- Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)IEEE Journal of Quantum Electronics, 1978
- GaAs1−yPy heterojunction lasersJournal of Applied Physics, 1977
- Visible GaAs0.7P0.3 cw heterojunction lasersApplied Physics Letters, 1977
- Yellow In1−xGaxP1−zAsz double-heterojunction lasersJournal of Applied Physics, 1976
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974