Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 378-382
- https://doi.org/10.1016/0022-0248(87)90420-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift MotionJapanese Journal of Applied Physics, 1985
- High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the baseApplied Physics Letters, 1985
- (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the baseElectronics Letters, 1983
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982