Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion
- 1 April 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (4A), L241
- https://doi.org/10.1143/jjap.24.l241
Abstract
The temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors with a graded bandgap base (GB-HBTs) is described. High current gain up to 1100 has been achieved at a collector current density of 6×103 A/cm2 in MBE grown GB-HBTs with a 1×1019 cm-3 doped base. The current gain in the low temperature region does not depend on temperature. This tendency is clearly explained by a nearly constant base transit time due to electron drift motion caused by the built-in field, which contrasts with the electron diffusion.Keywords
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