HgCdTe infrared diode lasers grown by MBE
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S), S255-S260
- https://doi.org/10.1088/0268-1242/8/1s/056
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- HgCdTe double heterostructure diode lasers grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Blue-green laser diodesApplied Physics Letters, 1991
- HgCdTe double heterostructure injection laser grown by molecular beam epitaxyApplied Physics Letters, 1991
- High-efficiency infrared light emitting diodes made in liquid phase epitaxy and molecular beam epitaxy HgCdTe layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxyApplied Physics Letters, 1989
- Photoluminescence from CdTe/Hg1−yCdyTe/Hg1−xCdxTe separate confinement heterostructuresApplied Physics Letters, 1989
- Light emission from HgCdTe diodesJournal of Vacuum Science & Technology A, 1988
- HgMnTe light emitting diodes and laser heterostructuresJournal of Vacuum Science & Technology A, 1988
- Infra-red electroluminescence from CdxHg1−xTe diodesElectronics Letters, 1986
- Optically pumped LPE-grown Hg1−xCdxTe lasersJournal of Electronic Materials, 1979