Electrical properties of Al2O3 gate dielectrics
- 1 April 2003
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 66 (1-4), 830-834
- https://doi.org/10.1016/s0167-9317(02)01007-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/ and Zr silicate gate dielectricsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectricIEEE Electron Device Letters, 2000
- Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substratesApplied Physics Letters, 1996