The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (1A), L35
- https://doi.org/10.1143/jjap.24.l35
Abstract
The threshold voltage scattering of GaAs metal-semiconductor field-effect transistors (MESFET's) fabricated on commercially available LEC-grown undoped semi-insulating GaAs substrate was investigated with varied annealing methods. It was found that the threshold voltage scattering greatly depended on annealing method. SiO2 capped annealing under arsenic vapor pressure allowed very uniform threshold voltage of GaAs MESFET's over the full water.Keywords
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