SiC Epitaxial Growth on Carbon
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A reviewSolid-State Electronics, 1996
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- Growth of large SiC single crystalsJournal of Crystal Growth, 1993