Growth kinetics of oxidation-induced stacking faults in silicon: A new concept
- 1 July 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1), 86-88
- https://doi.org/10.1063/1.92526
Abstract
It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2‐Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self‐interstitials in the Si crystal, and that consequently the growth kinetics of oxidation‐induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.Keywords
This publication has 10 references indexed in Scilit:
- Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) SiliconJournal of the Electrochemical Society, 1980
- On the Kinetics of the Thermal Oxidation of Silicon: I . A Theoretical PerspectiveJournal of the Electrochemical Society, 1980
- Kinetics of growth of the oxidation stacking faultsJournal of Applied Physics, 1979
- The effect of oxidation on the diffusion of phosphorus in siliconJournal of Applied Physics, 1979
- Oxidation induced stacking faults in n- and p-type (100) siliconJournal of Applied Physics, 1977
- Anomalous temperature effect of oxidation stacking faults in siliconApplied Physics Letters, 1975
- Oxidation stacking faults in epitaxial silicon crystalsJournal of Materials Science, 1975
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Growth of Lattice Defects in Silicon during OxidationJournal of Applied Physics, 1964
- Theory and Application of the Parallel Plate PlastometerJournal of Applied Physics, 1946