Application of effective-medium theory to inversion layers
- 28 August 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (16), 3395-3400
- https://doi.org/10.1088/0022-3719/12/16/027
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- VII. The Hall effect in inversion layersPhilosophical Magazine Part B, 1978
- Hall effect measurements on silicon inversion layersPhysics Letters A, 1978
- Threshold conduction in inversion layersJournal of Physics C: Solid State Physics, 1978
- Anomalous Hall effect and carrier transport in bandtails at the SiSiO2 interfaceSolid State Communications, 1976
- Conduction mechanisms in bandtails at the SiSiO2 interfaceSurface Science, 1976
- The Anderson transition in silicon inversion layersSurface Science, 1976
- Low temperature saturation of the channel conductivity in silicon inversion layersSurface Science, 1976
- Disorder-induced carrier localization in silicon surface inversion layersApplied Physics Letters, 1974