RESISTIVITY OF DEFORMED CRYSTALS

Abstract
The variation of electrical resistivity with deformation, as a function of purity and orientation, has been studied for Cu single crystals deformed in tension and fatigue. In stage I the rate of increase of resistivity depends very strongly on the impurity content, decreasing with increasing purity. In stage II the resistivity increases quadratically with stress, the rate of increase depending on orientation. The resistivity produced by dislocations appears not to be strongly anisotropic. The value of resistivity per unit dislocation is about 1 × 10−19 ΩSi-cm.