Optically Driven Spin Memory in-Doped InAs-GaAs Quantum Dots
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- 28 October 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 89 (20), 207401
- https://doi.org/10.1103/physrevlett.89.207401
Abstract
We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.Keywords
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