Junction Field Effect Transistors at 4.2 K
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 41 (7), 917-919
- https://doi.org/10.1063/1.1684726
Abstract
We report the behavior of 24 different types of junction field effect transistors at 4.2 K, giving the characteristics (gain, bandwidth, and noise) of the six different types which make satisfactory amplifiers.Keywords
This publication has 4 references indexed in Scilit:
- MOSFET Operation at 4.2 KReview of Scientific Instruments, 1968
- Operation of a Germanium FET at Low TemperaturesReview of Scientific Instruments, 1968
- Field Effect Transistors at 4.2°KReview of Scientific Instruments, 1968
- Germanium Fet--A Novel Low-Noise Active DeviceIEEE Transactions on Nuclear Science, 1968