The characterisation of Ga1−xInxAs,Al1−xInxAs and InP epitaxial layers prepared by metal organic chemical vapour deposition
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 319-325
- https://doi.org/10.1016/0022-0248(84)90432-9
Abstract
No abstract availableKeywords
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