Self-annealed ion implanted n+-p diodes
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (1), 62-64
- https://doi.org/10.1063/1.92925
Abstract
Self‐annealing implantation with dopant ions has been successfully applied to the creation of n+‐p silicon diodes. Experimental conditions as well as current voltage characteristics of self‐annealed implanted diodes and thermally annealed diodes used as controls are presented.Keywords
This publication has 1 reference indexed in Scilit:
- Self-annealing of ion-implanted silicon: First experimental resultsApplied Physics Letters, 1981