Self-annealing of ion-implanted silicon: First experimental results
- 15 May 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10), 808-810
- https://doi.org/10.1063/1.92139
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ion beam annealing of semiconductorsApplied Physics Letters, 1980
- Self annealing of ion implanted silicon: suggestion for an experimentRadiation Effects, 1980
- Characterisation of multiple-scan electron beam annealing methodElectronics Letters, 1980
- Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorusIEE Journal on Solidstate and Electron Devices, 1979
- The nature of rod-like defects observed in boron irradiated siliconRadiation Effects, 1972