Lasing transitions in GaAs/GaAs1−xPx strained-layer superlattices with x=0.1–0.5

Abstract

The role of strain in modifying lasing transition energy and gain coefficient in photopumped GaAs/GaAs_1−xP_x strained‐layer superlattices is investigated by examining photoluminescence, excitation, and lasing spectra for samples with x in the range 0.1–0.5. Over this range, the lasing transition energy increases 50 meV, independent of quantum size effects. The compressive biaxial strain present in the GaAs layers is expected to significantly increase the gain coefficient for the ‖3/2,±1/2〉 ‘‘light’’ hole transitions. However, polarization measurements of the lasing spectra show no evidence for lasing on the TM mode ‖3/2,±1/2〉 transitions and show lasing only on the TE mode ‖3/2,±3/2〉 ‘‘heavy’’ hole transitions.